Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor

Optimization of Ohmic Contact Metallization Process for AlGaN/GaN High Electron Mobility Transistor

Copyright 2013 KIEEME. All rights reserved. This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted noncommercial use, distribution, and reproduction in any medium, provided the original work is properly cited. Optimization of Ohmic Contact Metallization Proc...

Effect of Li Ion Irradiation on Reliability of AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor

AlGaAs/InGaAs/GaAs pHEMT (pseudomorphic high electron mobility transistors) materials and devices have been studied with 20MeV Li ions irradiation at two different fluences. The structural and electrical characteristics have been studied and compared before and after the irradiation. It has been found that with the irradiation FWHM of the material not changes as confirmed with x-ray rocking cur...

Electrochemical Capacitance-Voltage Analysis of Delta-Doped Pseudomorphic High-Electron-Mobility Transistor Material

Correlating gate sinking and electrical performance of pseudomorphic high electron mobility transistors

Ti interdiffusion from the Ti/Pt/Au gate into the AlGaAs Schottky barrier layer (SBL) of 0.25-lm GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs) has been studied using the accelerated life testing technique. Based on measurements and modeling, analytical expressions for quantitative correlation between the positive pinch-off voltage (VP) shift as well as the saturation drain curr...

Self-aligned Gate NanoPillar In0.53Ga0.47As Vertical Tunnel Transistor

Introduction: Tunnel field effect transistors (TFET) have gained interest recently owing to their potential in achieving sub-kT/q steep switching slope, thus promising low Vcc operation[1-5]. Steep switching slope has already been demonstrated in Silicon TFET [2]. However, it has been theoretically shown and experimentally proved that Si or SixGe1-x based homo-junction or hetero-junction TFETs ...